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| MITSUBISHI SEMICONDUCTOR MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) 240.3 (0.9450.012) FEATURES Class A operation Internally matched to 50 () system High output power P1dB=30W (TYP.) @f=2.1~2.3GHz High power gain GLP=12dB (TYP.) @f=2.1~2.3GHz High power added efficiency add=45% (TYP.) @f=2.1~2.3GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 (0.0240.006) 0.60.15 APPLICATION item 01 : 2.1~2.3GHz band power amplifier item 51 : 2.1~2.3GHz band digital radio communication 20.40.2 (0.8030.008) 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25 GF-38 (1) GATE (2) Source (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 < Keep safety first in your circuit designs! > Unit Mitsubishi Electric Corporation puts the maximum effort into Ratings -15 -15 22 -61 76 88 175 -65 ~ +175 V making semiconductor products better and more reliable, V but there is always the possibility that trouble may occur A with them.Trouble with semiconductors may lead to personal mA mA W C C injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 Test conditions VDS=3V, ID=60mA Limits Min. -- 44 Typ. -- 45 12 7.5 45 -45 -- Max -5 -- -- -- -- -- 1.7 Unit V dBm dB A % dBc C/W VDS=10V, ID(RF off)=6.5A, f=2.1~2.3GHz 11 -- -- -42 Vf method -- *1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,f=5MHz *2 : Channel to case MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. Freq. 46 VDS=10V IDS=6.5A P1dB Po, add vs. Pin 17 50 VDS=10V IDS=6.5A f=2.2GHz 70 45 16 45 Po 60 40 44 15 50 GLP 35 14 30 add 40 43 30 42 13 25 20 41 2.05 2.10 2.15 2.20 2.25 Frequency (GHz) 2.30 12 2.35 20 15 20 25 30 35 40 10 Po,IM3 vs. Pin 40 VDS=10V IDS=6.5A f1=2.300GHz f2=2.305GHz Input power Pin (dBm) 0 38 -10 Po 36 -20 34 IM3 -30 32 -40 30 -50 28 15 17 19 21 23 25 Input power Pin (dBm S.C.L.) 27 29 -60 S Parameters ( Tc=25C, VDS=10V, IDS=6.5A ) f (GHz) 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 S11 Angle(deg) -34 -77 -120 -153 -178 161 143 126 107 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 148 0.031 123 129 0.032 99 109 0.035 76 0.035 90 53 73 0.034 31 56 0.034 17 39 0.035 -4 22 0.036 -22 5 0.037 -39 MITSUBISHI ELECTRIC S22 Angle(deg) 17 -2 -26 -51 -72 -92 -109 -123 -134 Magn. 0.31 0.26 0.27 0.31 0.35 0.37 0.38 0.36 0.32 Magn. 4.76 4.96 5.02 4.99 4.88 4.79 4.69 4.62 4.56 Magn. 0.39 0.34 0.30 0.28 0.29 0.30 0.33 0.36 0.40 |
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